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Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70 - 85% Ge

dc.contributor.authorLoo, Roger
dc.contributor.authorSouriau, Laurent
dc.contributor.authorOng, Patrick
dc.contributor.authorKenis, Karine
dc.contributor.authorRip, Jens
dc.contributor.authorStorck, Peter
dc.contributor.authorBuschhardt, Thomas
dc.contributor.authorVorderwester, Martin
dc.date.accessioned2021-10-18T18:30:18Z
dc.date.available2021-10-18T18:30:18Z
dc.date.issued2010-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17528
dc.sourceIIOimport
dc.titleSmooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70 - 85% Ge
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorRip, Jens
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.source.peerreviewno
dc.source.conference5th International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate24/05/2010
dc.source.conferencelocationStockholm Sweden
imec.availabilityPublished - imec


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