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Extending gate dielectric scaling by using ALD HfO2/SrTiO3 stacks

dc.contributor.authorMaes, Jan
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorPierreux, Dieter
dc.contributor.authorBlomberg, Tom
dc.contributor.authorSwerts, Johan
dc.contributor.authorSchram, Tom
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorDelabie, Annelies
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorConard, Thierry
dc.contributor.authorTseng, Joshua
dc.contributor.authorRagnarsson, Lars-Ake
dc.date.accessioned2021-10-18T18:36:30Z
dc.date.available2021-10-18T18:36:30Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17545
dc.sourceIIOimport
dc.titleExtending gate dielectric scaling by using ALD HfO2/SrTiO3 stacks
dc.typeMeeting abstract
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorPierreux, Dieter
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.source.peerreviewno
dc.source.conference10th International Conference on Atomic Layer Deposition - ALD
dc.source.conferencedate20/06/2010
dc.source.conferencelocationSeoul Korea
imec.availabilityPublished - imec


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