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A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

dc.contributor.authorMarcon, Denis
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorDas, Jo
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorMertens, Robert
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T18:45:53Z
dc.date.available2021-10-18T18:45:53Z
dc.date.issued2010-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17571
dc.sourceIIOimport
dc.titleA comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage472
dc.source.endpage472
dc.source.conferenceIEEE International Electron Device Meeting - IEDM
dc.source.conferencedate6/12/2010
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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