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High temperature on- and off-state stress of GaN-on- Si HEMTs with in-situ Si3N4 cap layer

dc.contributor.authorMarcon, Denis
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDas, Jo
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorCheng, Kai
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMertens, Robert
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T18:46:20Z
dc.date.available2021-10-18T18:46:20Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17572
dc.sourceIIOimport
dc.titleHigh temperature on- and off-state stress of GaN-on- Si HEMTs with in-situ Si3N4 cap layer
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage146
dc.source.endpage151
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/05/2010
dc.source.conferencelocationAnaheim, CA USA
imec.availabilityPublished - open access


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