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SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors

dc.contributor.authorMartin-Martinez, J.
dc.contributor.authorAmat, E.
dc.contributor.authorGonzalez, Mario
dc.contributor.authorVerheyen, Peter
dc.contributor.authorRooyackers, Rita
dc.contributor.authorRodriguez, R.
dc.contributor.authorNafria, M.
dc.contributor.authorAymerich, X.
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-18T18:53:54Z
dc.date.available2021-10-18T18:53:54Z
dc.date.issued2010
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17593
dc.sourceIIOimport
dc.titleSPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors
dc.typeJournal article
dc.contributor.imecauthorGonzalez, Mario
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage1263
dc.source.endpage1266
dc.source.journalMicroelectronics Reliability
dc.source.issue9_11
dc.source.volume50
imec.availabilityPublished - imec
imec.internalnotesESREF 2010 paper


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