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Is GaN-on-Si HEMT technology suitable for space applications?

dc.contributor.authorMedjdoub, Farid
dc.contributor.authorMarcon, Denis
dc.contributor.authorDas, Jo
dc.contributor.authorDerluyn, Joff
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-18T18:59:40Z
dc.date.available2021-10-18T18:59:40Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17609
dc.sourceIIOimport
dc.titleIs GaN-on-Si HEMT technology suitable for space applications?
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.conferenceMicrowaves Technology and Techniques Workshop
dc.source.conferencedate10/05/2010
dc.source.conferencelocationNoordwijk Netherlands
imec.availabilityPublished - imec


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