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GaN-on-Si HEMTs Above 10 W/mm at 2 GHz together with high thermal stability at 325°C

dc.contributor.authorMedjdoub, Farid
dc.contributor.authorMarcon, Denis
dc.contributor.authorDas, Jo
dc.contributor.authorDerluyn, Joff
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorVellas, Nicolas
dc.contributor.authorGaquière, Christophe
dc.contributor.authorGermain, Marianne
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-18T19:00:07Z
dc.date.available2021-10-18T19:00:07Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17610
dc.sourceIIOimport
dc.titleGaN-on-Si HEMTs Above 10 W/mm at 2 GHz together with high thermal stability at 325°C
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.conferenceEuropean Microwave Conference - EuMiC
dc.source.conferencedate26/10/2010
dc.source.conferencelocationParis France
imec.availabilityPublished - imec


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