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Metal-organic chemical vapor deposition of Ti-doped NiO layers for application in resistive switching memories

dc.contributor.authorMeersschaut, Johan
dc.contributor.authorToeller, Michael
dc.contributor.authorSchaekers, Marc
dc.contributor.authorWang, Xin Peng
dc.contributor.authorBrijs, Bert
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Gosia
dc.contributor.authorAltimime, Laith
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorVancoille, Eric
dc.date.accessioned2021-10-18T19:01:24Z
dc.date.available2021-10-18T19:01:24Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17613
dc.sourceIIOimport
dc.titleMetal-organic chemical vapor deposition of Ti-doped NiO layers for application in resistive switching memories
dc.typeProceedings paper
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorVancoille, Eric
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewyes
dc.source.beginpage313
dc.source.endpage322
dc.source.conferencePhysics and Technology of High-k Materials 8
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 33, Iss. 3


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