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Experimental studies of dose retention and activation in fin field-effect-transistor-based structures

dc.contributor.authorMody, Jay
dc.contributor.authorDuffy, Ray
dc.contributor.authorEyben, Pierre
dc.contributor.authorGoossens, Jozefien
dc.contributor.authorMoussa, Alain
dc.contributor.authorPolspoel, Wouter
dc.contributor.authorBerghmans, Bart
dc.contributor.authorVan Dal, Mark
dc.contributor.authorPawlak, Bartek
dc.contributor.authorKaiser, Monja
dc.contributor.authorWeemaes, R. G. R.
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-18T19:15:21Z
dc.date.available2021-10-18T19:15:21Z
dc.date.issued2010
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17647
dc.sourceIIOimport
dc.titleExperimental studies of dose retention and activation in fin field-effect-transistor-based structures
dc.typeJournal article
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageC1H5
dc.source.endpageC1H13
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue1
dc.source.volume28
imec.availabilityPublished - open access


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