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Structure, mechanism, and programming sequence for repeatable bipolar resistive electrical switching of AgTCNQ-based memory cells

dc.contributor.authorMuller, Robert
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-18T19:21:20Z
dc.date.available2021-10-18T19:21:20Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17662
dc.sourceIIOimport
dc.titleStructure, mechanism, and programming sequence for repeatable bipolar resistive electrical switching of AgTCNQ-based memory cells
dc.typeOral presentation
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting Symposium G: Materials and Physics of Nonvolatile Memories
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttp://www.mrs.org/s_mrs/bin.asp?CID=25134&DID=291251&DOC=FILE.PDF
imec.availabilityPublished - imec
imec.internalnotesG4.10


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