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Sub-10 μA reset in NiO-based resistive switching memory (RRAM) cells

dc.contributor.authorNardi, F
dc.contributor.authorIelmini, D
dc.contributor.authorCagli, C
dc.contributor.authorSpiga, S
dc.contributor.authorFanciulli, M
dc.contributor.authorGoux, Ludovic
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-18T19:29:59Z
dc.date.available2021-10-18T19:29:59Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17684
dc.sourceIIOimport
dc.titleSub-10 μA reset in NiO-based resistive switching memory (RRAM) cells
dc.typeProceedings paper
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage66
dc.source.endpage69
dc.source.conferenceInternational Memory Workshop - IMW
dc.source.conferencedate16/05/2010
dc.source.conferencelocationMonterey, CA USA
dc.identifier.url10.1109/IMW.2010.5488317
imec.availabilityPublished - imec


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