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Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

dc.contributor.authorNguyen, Duy
dc.contributor.authorRosseel, Erik
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorYang, Lijun
dc.contributor.authorGoossens, Jozefien
dc.contributor.authorMoussa, Alain
dc.contributor.authorClarysse, Trudo
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorZaima, S.
dc.contributor.authorSakai, A.
dc.contributor.authorLoo, Roger
dc.contributor.authorLin, J.C.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-18T19:32:05Z
dc.date.available2021-10-18T19:32:05Z
dc.date.issued2010
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17689
dc.sourceIIOimport
dc.titleUse of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology
dc.typeJournal article
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpageS48
dc.source.endpageS52
dc.source.journalThin Solid Films
dc.source.issue6, Suppl. 1
dc.source.volume518
imec.availabilityPublished - imec
imec.internalnotes6th Int. Conf. Silicon Epitaxy and Heterosturctures


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