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Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems

dc.contributor.authorNishimura, Tsuyoshi
dc.contributor.authorShimura, Yosuke
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorVincent, Benjamin
dc.contributor.authorVantomme, Andre
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorNakatsuka, Osaku
dc.contributor.authorZaima, Shigeaki
dc.date.accessioned2021-10-18T19:37:36Z
dc.date.available2021-10-18T19:37:36Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17702
dc.sourceIIOimport
dc.titleFormation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
dc.typeMeeting abstract
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conference5th International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate24/05/2010
dc.source.conferencelocationStockholm Sweden
imec.availabilityPublished - imec


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