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TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology

dc.contributor.authorNorris, D.J.
dc.contributor.authorWalther, T.
dc.contributor.authorCullis, A.G.
dc.contributor.authorMyronov, M.
dc.contributor.authorDobbie, A.
dc.contributor.authorWhall, T.
dc.contributor.authorParker, E.H.C.
dc.contributor.authorLeadley, D.R.
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorLee, Willie
dc.contributor.authorMeuris, Marc
dc.contributor.authorWatling, J.
dc.contributor.authorAsenov, A.
dc.date.accessioned2021-10-18T19:40:50Z
dc.date.available2021-10-18T19:40:50Z
dc.date.issued2010
dc.identifier.issn1742-6588
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17710
dc.sourceIIOimport
dc.titleTEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology
dc.typeJournal article
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage12061
dc.source.journalJournal of Physics Conference Series
dc.source.issue1
dc.source.volume209
imec.availabilityPublished - open access
imec.internalnotesMicroscopy of Semiconducting Materials Conference; MSM-16, Oxford, UK; March 2009


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