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Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing

dc.contributor.authorNourbakhsh, Amirhasan
dc.contributor.authorCantoro, Mirco
dc.contributor.authorKlekachev, Alexander
dc.contributor.authorClemente, Francesca
dc.contributor.authorSoree, Bart
dc.contributor.authorvan der Veen, Marleen
dc.contributor.authorVosch, Tom
dc.contributor.authorStesmans, Andre
dc.contributor.authorSels, Bert
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-18T19:41:42Z
dc.date.available2021-10-18T19:41:42Z
dc.date.issued2010
dc.identifier.issn1932-7447
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17712
dc.sourceIIOimport
dc.titleTuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing
dc.typeJournal article
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorvan der Veen, Marleen
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecvan der Veen, Marleen::0000-0002-9402-8922
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage6894
dc.source.endpage6900
dc.source.journalJournal of Physical Chemistry C
dc.source.issue15
dc.source.volume114
imec.availabilityPublished - imec


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