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Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing
Publication:
Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing
Date
2010
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nourbakhsh, Amirhasan
;
Cantoro, Mirco
;
Klekachev, Alexander
;
Clemente, Francesca
;
Soree, Bart
;
van der Veen, Marleen
;
Vosch, Tom
;
Stesmans, Andre
;
Sels, Bert
;
De Gendt, Stefan
Journal
Journal of Physical Chemistry C
Abstract
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1942
since deposited on 2021-10-18
459
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations
Metrics
Views
1942
since deposited on 2021-10-18
459
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations