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Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing

Date

2010
Journal article
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dc.contributor.authorNourbakhsh, Amirhasan
dc.contributor.authorCantoro, Mirco
dc.contributor.authorKlekachev, Alexander
dc.contributor.authorClemente, Francesca
dc.contributor.authorSoree, Bart
dc.contributor.authorvan der Veen, Marleen
dc.contributor.authorVosch, Tom
dc.contributor.authorStesmans, Andre
dc.contributor.authorSels, Bert
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorvan der Veen, Marleen
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecvan der Veen, Marleen::0000-0002-9402-8922
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-18T19:41:42Z
dc.date.available2021-10-18T19:41:42Z
dc.date.issued2010
dc.identifier.issn1932-7447
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17712
dc.source.beginpage6894
dc.source.endpage6900
dc.source.issue15
dc.source.journalJournal of Physical Chemistry C
dc.source.volume114
dc.title

Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing

dc.typeJournal article
dspace.entity.typePublication
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