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Charging of submicron structures during silicon dioxide etching in one

dc.contributor.authorPalov, P.A.
dc.contributor.authorMankelevich, Yu. A.
dc.contributor.authorRakhimova, T. V.
dc.contributor.authorShamiryan, Denis
dc.date.accessioned2021-10-18T19:59:48Z
dc.date.available2021-10-18T19:59:48Z
dc.date.issued2010
dc.identifier.issn1063-780X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17758
dc.sourceIIOimport
dc.titleCharging of submicron structures during silicon dioxide etching in one
dc.typeJournal article
dc.source.peerreviewyes
dc.source.beginpage891
dc.source.endpage901
dc.source.journalPlasma Physics Reports
dc.source.issue10
dc.source.volume36
imec.availabilityPublished - imec


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