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dc.contributor.authorPetersen, Dirch H.
dc.contributor.authorHansen, Ole
dc.contributor.authorBĝggild, Peter
dc.contributor.authorLin, Rong
dc.contributor.authorNielsen, Peter F.
dc.contributor.authorLin, Dennis
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorAlian, AliReza
dc.contributor.authorMerckling, Clement
dc.contributor.authorPenaud, Julien
dc.contributor.authorBrammertz, Guy
dc.contributor.authorGoossens, Jozefien
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClarysse, Trudo
dc.date.accessioned2021-10-18T20:14:53Z
dc.date.available2021-10-18T20:14:53Z
dc.date.issued2010
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17796
dc.sourceIIOimport
dc.titleElectrical characterization of InGaAs ultra-shallow junctions
dc.typeJournal article
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.source.peerreviewyes
dc.source.beginpageC1C41
dc.source.endpageC1C47
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue1
dc.source.volume28
dc.identifier.urlhttp://dx.doi.org/10.1116/1.3231492
imec.availabilityPublished - imec


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