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Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

dc.contributor.authorPut, Sofie
dc.contributor.authorMehta, H.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorVan Uffelen, M.
dc.contributor.authorLeroux, P.
dc.contributor.authorClaeys, Cor
dc.contributor.authorLukyanchikova, N.
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-18T20:39:24Z
dc.date.available2021-10-18T20:39:24Z
dc.date.issued2010
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17858
dc.sourceIIOimport
dc.titleEffect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage178
dc.source.endpage184
dc.source.journalSolid-State Electronics
dc.source.issue2
dc.source.volume54
imec.availabilityPublished - open access


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