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Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
Publication:
Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
Date
2010
Journal article
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18391.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Put, Sofie
;
Mehta, H.
;
Collaert, Nadine
;
Van Uffelen, M.
;
Leroux, P.
;
Claeys, Cor
;
Lukyanchikova, N.
;
Simoen, Eddy
Journal
Solid-State Electronics
Abstract
Description
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1947
since deposited on 2021-10-18
409
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations
Metrics
Views
1947
since deposited on 2021-10-18
409
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations