Publication:

Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

Date

2010
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorPut, Sofie
dc.contributor.authorMehta, H.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorVan Uffelen, M.
dc.contributor.authorLeroux, P.
dc.contributor.authorClaeys, Cor
dc.contributor.authorLukyanchikova, N.
dc.contributor.authorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-18T20:39:24Z
dc.date.available2021-10-18T20:39:24Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17858
dc.source.beginpage178
dc.source.endpage184
dc.source.issue2
dc.source.journalSolid-State Electronics
dc.source.volume54
dc.title

Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
18391.pdf
Size:
1.1 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Articles