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Articles
Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
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Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
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Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Put, Sofie
;
Mehta, H.
;
Collaert, Nadine
;
Van Uffelen, M.
;
Leroux, P.
;
Claeys, Cor
;
Lukyanchikova, N.
;
Simoen, Eddy
Journal
Solid-State Electronics
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1950
since deposited on 2021-10-18
Acq. date: 2025-12-11
Citations
Metrics
Views
1950
since deposited on 2021-10-18
Acq. date: 2025-12-11
Citations