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Influence of back-gate bias and process conditions on the gamma degradation of the transconductance of MuGFETs

dc.contributor.authorPut, Sofie
dc.contributor.authorSimoen, Eddy
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorClaeys, Cor
dc.contributor.authorVan Uffelen, Marco
dc.contributor.authorLeroux, Paul
dc.date.accessioned2021-10-18T20:39:50Z
dc.date.available2021-10-18T20:39:50Z
dc.date.issued2010
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17859
dc.sourceIIOimport
dc.titleInfluence of back-gate bias and process conditions on the gamma degradation of the transconductance of MuGFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1771
dc.source.endpage1776
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue4
dc.source.volume57
imec.availabilityPublished - open access


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