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Influence of back-gate bias and process conditions on the gamma degradation of the transconductance of MuGFETs
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Influence of back-gate bias and process conditions on the gamma degradation of the transconductance of MuGFETs
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Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Put, Sofie
;
Simoen, Eddy
;
Collaert, Nadine
;
De Keersgieter, An
;
Claeys, Cor
;
Van Uffelen, Marco
;
Leroux, Paul
Journal
IEEE Transactions on Nuclear Science
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1878
since deposited on 2021-10-18
Acq. date: 2026-01-08
Citations
Metrics
Views
1878
since deposited on 2021-10-18
Acq. date: 2026-01-08
Citations