Influence of back-gate bias and process conditions on the gamma degradation of the transconductance of MuGFETs

dc.contributor.author	Put, Sofie
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Collaert, Nadine
dc.contributor.author	De Keersgieter, An
dc.contributor.author	Claeys, Cor
dc.contributor.author	Van Uffelen, Marco
dc.contributor.author	Leroux, Paul
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.imecauthor	De Keersgieter, An
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimec	De Keersgieter, An::0000-0002-5527-8582
dc.date.accessioned	2021-10-18T20:39:50Z
dc.date.available	2021-10-18T20:39:50Z
dc.date.embargo	9999-12-31
dc.date.issued	2010
dc.identifier.issn	0018-9499
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/17859
dc.source.beginpage	1771
dc.source.endpage	1776
dc.source.issue	4
dc.source.journal	IEEE Transactions on Nuclear Science
dc.source.volume	57
dc.title	Influence of back-gate bias and process conditions on the gamma degradation of the transconductance of MuGFETs
dc.type	Journal article
dspace.entity.type	Publication
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