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Monte Carlo simulation study of hole mobility in germanium MOS inversion layers

dc.contributor.authorRiddet, C.
dc.contributor.authorWatling, J.R.
dc.contributor.authorChan, K.H.
dc.contributor.authorAsenov, A.
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorMitard, Jerome
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-18T20:49:43Z
dc.date.available2021-10-18T20:49:43Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17882
dc.sourceIIOimport
dc.titleMonte Carlo simulation study of hole mobility in germanium MOS inversion layers
dc.typeProceedings paper
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpage4 pp.
dc.source.conference14th International Workshop on Computational Electronics- IWCE
dc.source.conferencedate26/10/2010
dc.source.conferencelocationPisa Italy
imec.availabilityPublished - imec


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