Show simple item record

Analog application of SOI nFinFETs with different TiN gate electrode thickness operating at cryogenic temperatures

dc.contributor.authorRodrigues, M.
dc.contributor.authorGaleti, M.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, J.A.
dc.date.accessioned2021-10-18T20:51:47Z
dc.date.available2021-10-18T20:51:47Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17887
dc.sourceIIOimport
dc.titleAnalog application of SOI nFinFETs with different TiN gate electrode thickness operating at cryogenic temperatures
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage53
dc.source.endpage55
dc.source.conference9th International Workshop on Low Temperature Electronics - WOLTE
dc.source.conferencedate21/06/2010
dc.source.conferencelocationGuaruja Brazil
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
21832.pdf
Size:
282.5Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record