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Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p- channel MuGFETs

dc.contributor.authorRodrigues, M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T20:52:13Z
dc.date.available2021-10-18T20:52:13Z
dc.date.issued2010
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17888
dc.sourceIIOimport
dc.titleLow-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p- channel MuGFETs
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1592
dc.source.endpage1597
dc.source.journalSolid-State Electronics
dc.source.issue12
dc.source.volume54
imec.availabilityPublished - open access


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