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A novel trapping/detrapping model for defect profiling in high-k materials using the two-pulse capacitance-voltage technique

dc.contributor.authorRuiz Aguado, Daniel
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorZhang, W.D.
dc.contributor.authorJurczak, Gosia
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-18T21:04:03Z
dc.date.available2021-10-18T21:04:03Z
dc.date.issued2010
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17916
dc.sourceIIOimport
dc.titleA novel trapping/detrapping model for defect profiling in high-k materials using the two-pulse capacitance-voltage technique
dc.typeJournal article
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2726
dc.source.endpage2735
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue10
dc.source.volume57
imec.availabilityPublished - open access


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