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Correlation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap density

dc.contributor.authorSahhaf, Sahar
dc.contributor.authorDegraeve, Robin
dc.contributor.authorSrividya, Vidya
dc.contributor.authorKaczer, Ben
dc.contributor.authorGealy, Dan
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T21:09:32Z
dc.date.available2021-10-18T21:09:32Z
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17929
dc.sourceIIOimport
dc.titleCorrelation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap density
dc.typeJournal article
dc.contributor.imecauthorSahhaf, Sahar
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage272
dc.source.endpage274
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume31
imec.availabilityPublished - open access


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