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High doping/high electric field effects on the characteristics of CMOS compatible p-n junctions

dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorKobayashi, Daisuke
dc.contributor.authorLuque Rodriguez, Abraham
dc.contributor.authorJimenez Tejada, Juan-Antonio
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T21:35:15Z
dc.date.available2021-10-18T21:35:15Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17987
dc.sourceIIOimport
dc.titleHigh doping/high electric field effects on the characteristics of CMOS compatible p-n junctions
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage307
dc.source.endpage318
dc.source.conferenceMicroelectronics Technology and Devices - SBMICRO 2010
dc.source.conferencedate6/09/2010
dc.source.conferencelocationSao Paulo Brazil
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 31, Iss. 1


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