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A DLTS study of SiO2 and SiO2/SiNx bi-layer surface passivation of silicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorGong, Chun
dc.contributor.authorPosthuma, Niels
dc.contributor.authorVan Kerschaver, Emmanuel
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-10-18T21:36:10Z
dc.date.available2021-10-18T21:36:10Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17989
dc.sourceIIOimport
dc.titleA DLTS study of SiO2 and SiO2/SiNx bi-layer surface passivation of silicon
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage145
dc.source.endpage153
dc.source.conferenceHigh Purity Silicon 11
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 33, Iss. 11


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