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Reliable 5.9nm tunnel oxide flash EEPROM device

dc.contributor.authorDe Blauwe, Jan
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorWellekens, Dirk
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-09-30T08:03:47Z
dc.date.available2021-09-30T08:03:47Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1798
dc.sourceIIOimport
dc.titleReliable 5.9nm tunnel oxide flash EEPROM device
dc.typeOral presentation
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.conference15th IEEE Non -Volatile Semiconductor Workshop (NVSM) ; February 1997; Monterey, Calif., USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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