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S-passivation of the Ge gate stack using (NH4)2S

dc.contributor.authorSioncke, Sonja
dc.contributor.authorFleischmann, Claudia
dc.contributor.authorLin, Dennis
dc.contributor.authorVrancken, Evi
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorTemst, Kristiaan
dc.contributor.authorVantomme, Andre
dc.contributor.authorMuller, Matthias
dc.contributor.authorKolbe, Michael
dc.contributor.authorBeckhoff, Burkhard
dc.date.accessioned2021-10-18T21:38:53Z
dc.date.available2021-10-18T21:38:53Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17995
dc.sourceIIOimport
dc.titleS-passivation of the Ge gate stack using (NH4)2S
dc.typeMeeting abstract
dc.contributor.imecauthorFleischmann, Claudia
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorTemst, Kristiaan
dc.contributor.imecauthorVantomme, Andre
dc.contributor.orcidimecFleischmann, Claudia::0000-0003-1531-6916
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpage7.4
dc.source.conference10th International Symposium on Ultra-Clean Processing of Semiconductor Devices - UCPSS
dc.source.conferencedate20/09/2010
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - imec


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