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dc.contributor.authorSioncke, Sonja
dc.contributor.authorLin, Dennis
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDelabie, Annelies
dc.contributor.authorConard, Thierry
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorStruyf, Herbert
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorFleischmann, Claudia
dc.contributor.authorTemst, Kristiaan
dc.contributor.authorVantomme, Andre
dc.contributor.authorBeckhoff, Burkhard
dc.date.accessioned2021-10-18T21:39:26Z
dc.date.available2021-10-18T21:39:26Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17996
dc.sourceIIOimport
dc.titleALD on high mobility channels: engineering the proper gate stack passivation
dc.typeMeeting abstract
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorFleischmann, Claudia
dc.contributor.imecauthorTemst, Kristiaan
dc.contributor.imecauthorVantomme, Andre
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecFleischmann, Claudia::0000-0003-1531-6916
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1401
dc.source.conference218th ECS Meeting Symposium ' Atomic Layer Deposition Applications 6'
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - open access
imec.internalnotesECS Meeting Abstracts; Vol. MA 2010-02


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