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Non-volatile and volatile bipolar resistive electrical switching in Ag and Cu chalcogenide memories wit a dedicated switching layer

dc.contributor.authorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.date.accessioned2021-10-18T21:40:27Z
dc.date.available2021-10-18T21:40:27Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17998
dc.sourceIIOimport
dc.titleNon-volatile and volatile bipolar resistive electrical switching in Ag and Cu chalcogenide memories wit a dedicated switching layer
dc.typeProceedings paper
dc.contributor.imecauthorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.orcidimecSivaramakrishnan Radhakrishnan, Hariharsudan::0000-0003-1963-273X
dc.source.peerreviewno
dc.source.beginpage515
dc.source.endpage520
dc.source.conference15th IEEE Meditteranean Electrotechnical Conference - MELECON
dc.source.conferencedate25/04/2010
dc.source.conferencelocationValletta Malta
imec.availabilityPublished - imec


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