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Improvement of AlN SAW performance by introduction of TiN nucleation layer on silicon substrate

dc.contributor.authorSoltani, A.
dc.contributor.authorTalbi, A.
dc.contributor.authorMortet, Vincent
dc.contributor.authorBassam, A.
dc.contributor.authorOussous, A.
dc.contributor.authorMonroy, E.
dc.contributor.authorHaenen, Ken
dc.contributor.authorde Jaeger, J.C.
dc.contributor.authorPernod, P.
dc.date.accessioned2021-10-18T21:44:42Z
dc.date.available2021-10-18T21:44:42Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18008
dc.sourceIIOimport
dc.titleImprovement of AlN SAW performance by introduction of TiN nucleation layer on silicon substrate
dc.typeOral presentation
dc.contributor.imecauthorHaenen, Ken
dc.contributor.orcidimecHaenen, Ken::0000-0001-6711-7367
dc.source.peerreviewno
dc.source.conferenceHasselt Diamond Workshop - SBDD XV
dc.source.conferencedate22/02/2010
dc.source.conferencelocationHasselt Belgium
imec.availabilityPublished - imec


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