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dc.contributor.authorSoltani, A.
dc.contributor.authorTalbi, A.
dc.contributor.authorMortet, Vincent
dc.contributor.authorBenmoussa, A.
dc.contributor.authorZhang, W.J.
dc.contributor.authorGerbedoen, J.-C.
dc.contributor.authorde Jaeger, J.-C.
dc.contributor.authorGokarna, A.
dc.contributor.authorHaenen, Ken
dc.contributor.authorWagner, Patrick
dc.date.accessioned2021-10-18T21:45:13Z
dc.date.available2021-10-18T21:45:13Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18009
dc.sourceIIOimport
dc.titleDiamond and cubic boron nitride: properties, growth and applications
dc.typeProceedings paper
dc.contributor.imecauthorHaenen, Ken
dc.contributor.orcidimecHaenen, Ken::0000-0001-6711-7367
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage191
dc.source.endpage196
dc.source.conferenceWide Bandgap Cubic Semiconductors: From Growth to Devices: Proceedings of the 2010 E-MRS Symposium F
dc.source.conferencedate8/10/2010
dc.source.conferencelocationStrasboug France
imec.availabilityPublished - open access
imec.internalnotesAIP Conference Proceedings; Vol. 1292


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