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Single dopant effects in ballistic nanowire transistors

dc.contributor.authorSoree, Bart
dc.contributor.authorSels, Dries
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T21:50:24Z
dc.date.available2021-10-18T21:50:24Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18021
dc.sourceIIOimport
dc.titleSingle dopant effects in ballistic nanowire transistors
dc.typeOral presentation
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.source.peerreviewno
dc.source.conferenceNanoelectronics Days
dc.source.conferencedate4/10/2010
dc.source.conferencelocationAachen Germany
imec.availabilityPublished - imec


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