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AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications

dc.contributor.authorSrivastava, Puneet
dc.contributor.authorDas, Jo
dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDerluyn, Joff
dc.contributor.authorMalinowski, Pawel
dc.contributor.authorKang, Xuanwu
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorMertens, Robert
dc.contributor.authorGermain, Marianne
dc.date.accessioned2021-10-18T21:53:38Z
dc.date.available2021-10-18T21:53:38Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18028
dc.sourceIIOimport
dc.titleAlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
dc.typeMeeting abstract
dc.contributor.imecauthorMalinowski, Pawel
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecMalinowski, Pawel::0000-0002-2934-470X
dc.source.peerreviewno
dc.source.conferenceYoung Researchers Symposium 2010 organized by IEEE Joint IAS- PELS-PES Chapter Benelux
dc.source.conferencedate29/03/2010
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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