Show simple item record

Significant enhancement of breakdown voltage for GaN DHFETs by silicon substrate removal

dc.contributor.authorSrivastava, Puneet
dc.contributor.authorDas, Jo
dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorMalinowski, Pawel
dc.contributor.authorMarcon, Denis
dc.contributor.authorGeens, Karen
dc.contributor.authorCheng, Kai
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMertens, Robert
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T21:54:08Z
dc.date.available2021-10-18T21:54:08Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18029
dc.sourceIIOimport
dc.titleSignificant enhancement of breakdown voltage for GaN DHFETs by silicon substrate removal
dc.typeOral presentation
dc.contributor.imecauthorMalinowski, Pawel
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMalinowski, Pawel::0000-0002-2934-470X
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.conferenceInternational Workshop on Nitrides - IWN
dc.source.conferencedate19/09/2010
dc.source.conferencelocationTampa, FL USA
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record