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Validation of retention modeling as a trap-profiling technique for SiN-based charge-trapping memories

dc.contributor.authorSuhane, Amit
dc.contributor.authorArreghini, Antonio
dc.contributor.authorDegraeve, Robin
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorBreuil, Laurent
dc.contributor.authorZahid, Mohammed
dc.contributor.authorJurczak, Gosia
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-18T22:04:49Z
dc.date.available2021-10-18T22:04:49Z
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18052
dc.sourceIIOimport
dc.titleValidation of retention modeling as a trap-profiling technique for SiN-based charge-trapping memories
dc.typeJournal article
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage77
dc.source.endpage79
dc.source.journalIEEE Electron Device Letters
dc.source.issue1
dc.source.volume31
imec.availabilityPublished - open access


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