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Validation of retention modeling as a trap-profiling technique for SiN-based charge-trapping memories
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Authors
Suhane, Amit
;
Arreghini, Antonio
;
Degraeve, Robin
;
Van den Bosch, Geert
;
Breuil, Laurent
;
Zahid, Mohammed
;
Jurczak, Gosia
;
De Meyer, Kristin
;
Van Houdt, Jan
ISSN
0741-3106
Issue
1
Journal
IEEE Electron Device Letters
Volume
31
Title
Validation of retention modeling as a trap-profiling technique for SiN-based charge-trapping memories
Publication type
Journal article
Embargo date
9999-12-31
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