Publication:

Validation of retention modeling as a trap-profiling technique for SiN-based charge-trapping memories

Date

2010
Journal article
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Author(s)

Suhane, Amit
;
Arreghini, Antonio  
;
Degraeve, Robin  
;
Van den Bosch, Geert  
;
Breuil, Laurent  
;
Zahid, Mohammed
;
Jurczak, Gosia  
;
De Meyer, Kristin  
;
Van Houdt, Jan  

Journal

IEEE Electron Device Letters

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