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Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories

dc.contributor.authorSuhane, Amit
dc.contributor.authorArreghini, Antonio
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVandelli, Luca
dc.contributor.authorPadovani, Andrea
dc.contributor.authorBreuil, Laurent
dc.contributor.authorLarcher, Luca
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-18T22:05:20Z
dc.date.available2021-10-18T22:05:20Z
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18053
dc.sourceIIOimport
dc.titleExperimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
dc.typeJournal article
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage936
dc.source.endpage938
dc.source.journalIEEE Electron Device Letters
dc.source.issue9
dc.source.volume31
imec.availabilityPublished - open access


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