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Impact of precursor chemistry and process conditions on the scalability of ALD HfO2 gate dielectrics

dc.contributor.authorSwerts, Johan
dc.contributor.authorPeys, Nick
dc.contributor.authorNyns, Laura
dc.contributor.authorDelabie, Annelies
dc.contributor.authorFranquet, Alexis
dc.contributor.authorMaes, Jan
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-18T22:07:41Z
dc.date.available2021-10-18T22:07:41Z
dc.date.issued2010
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18058
dc.sourceIIOimport
dc.titleImpact of precursor chemistry and process conditions on the scalability of ALD HfO2 gate dielectrics
dc.typeJournal article
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageG26
dc.source.endpageG31
dc.source.journalJournal of the Electrochemical Society
dc.source.issue1
dc.source.volume157
imec.availabilityPublished - open access


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