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Impact of precursor chemistry and process conditions on the scalability of ALD HfO2 gate dielectrics
Publication:
Impact of precursor chemistry and process conditions on the scalability of ALD HfO2 gate dielectrics
Date
2010
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Swerts, Johan
;
Peys, Nick
;
Nyns, Laura
;
Delabie, Annelies
;
Franquet, Alexis
;
Maes, Jan
;
Van Elshocht, Sven
;
De Gendt, Stefan
Journal
Journal of the Electrochemical Society
Abstract
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1855
since deposited on 2021-10-18
409
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations
Metrics
Views
1855
since deposited on 2021-10-18
409
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations