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Impact of precursor chemistry and process conditions on the scalability of ALD HfO2 gate dielectrics
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Impact of precursor chemistry and process conditions on the scalability of ALD HfO2 gate dielectrics
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Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Swerts, Johan
;
Peys, Nick
;
Nyns, Laura
;
Delabie, Annelies
;
Franquet, Alexis
;
Maes, Jan
;
Van Elshocht, Sven
;
De Gendt, Stefan
Journal
Journal of the Electrochemical Society
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1859
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Views
1859
since deposited on 2021-10-18
3
last month
Acq. date: 2025-12-10
Citations