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Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorShimura, Yosuke
dc.contributor.authorNishimura, Tsuyoshi
dc.contributor.authorVincent, Benjamin
dc.contributor.authorEneman, Geert
dc.contributor.authorClarysse, Trudo
dc.contributor.authorDemeulemeester, Jelle
dc.contributor.authorTemst, Kristiaan
dc.contributor.authorVantomme, Andre
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorSakai, A.
dc.contributor.authorZaima, Shigeaki
dc.date.accessioned2021-10-18T22:11:06Z
dc.date.available2021-10-18T22:11:06Z
dc.date.issued2010-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18065
dc.sourceIIOimport
dc.titleAssessment of Ge1-xSnx alloys for strained Ge CMOS devices
dc.typeProceedings paper
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorTemst, Kristiaan
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage529
dc.source.endpage535
dc.source.conferenceSiGe, Ge, and Related Compounds: Materials, Processing, and Devices
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 33, Iss. 6


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